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IXFV74N20PSN-Channel 200 V 74A (Tc) 480W (Tc) Surface Mount PLUS-220SMD
N/A
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ABRmicro #.ABR2045-IXFV74-951130
ManufacturerIXYS
MPN #.IXFV74N20PS
Estimated Lead Time-
SampleGet Free Sample
DatasheetIXF(H,V)74N20P(S)(PDF)
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Technical Specifications
SeriesPolarHT™ HiPerFET™
Packaging
Box
Lifecycle StatusObsolete
Base Product NumberIXFV74
Continuous Drain Current (ID) @ 25°C74A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)107 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3300 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 37A, 10V
Package Type (Mfr.)PLUS-220SMD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CasePLUS-220SMD
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFV74N20PS is an N-channel MOSFET manufactured by IXYS, designed for efficient electrical switching and power management. This surface-mount device, housed in a PLUS-220SMD package, is characterized by its ability to handle a drain-to-source voltage of up to 200 V and continuous drain current of 74A at the case temperature. It offers substantial power dissipation capability, rated at 480W under specified conditions. The component operates with a gate-to-source voltage of 10V and features an input capacitance of 3300 pF at 25 V, enabling robust performance in high-power applications without overstating its capabilities or intended uses.
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