IXFV15N100PN-Channel 1000 V 15A (Tc) 543W (Tc) Through Hole PLUS220
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ABRmicro #.ABR2045-IXFV15-951436
ManufacturerIXYS
MPN #.IXFV15N100P
Estimated Lead Time-
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Datasheet
IXFH-FV15N100P/PS(PDF)
IXFH-FV15N100P/PS(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™, PolarP2™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFV15
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)97 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5140 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation543W (Tc)
RDS(on) Drain-to-Source On Resistance760mOhm @ 500mA, 10V
Package Type (Mfr.)PLUS220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 1mA
Package / CaseTO-220-3, Short Tab
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFV15N100P is a power MOSFET manufactured by IXYS, featuring an N-channel design. It is characterized by its ability to handle a continuous drain current of 15A and a drain-source voltage of up to 1000V. The device boasts a maximum power dissipation capability of 543W when mounted to a suitable heatsink. With a maximum on-resistance of 760mOhm at 500mA and 10V gate-source voltage, it offers reliable performance for high-voltage applications. The MOSFET comes in a PLUS220 through-hole package, allowing for easy integration into a variety of electronic circuits, making it a robust choice for high power and voltage scenarios.
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