IXFT70N20Q3N-Channel 200 V 70A (Tc) 690W (Tc) Surface Mount TO-268AA
1:$12.6000
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ABRmicro #.ABR2045-IXFT70-1033194
ManufacturerIXYS
MPN #.IXFT70N20Q3
Estimated Lead Time44 Weeks
SampleGet Free Sample
Datasheet
IXFx70N20Q3(PDF)
IXFx70N20Q3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 12.6000
Ext. Price$ 12.6000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$12.6000$12.6000
30$10.1990$305.9680
120$9.5990$1151.8350
510$8.6990$4436.3310
1020$7.9780$8137.8790
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, Q3 Class
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFT70
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)67 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3150 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation690W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 35A, 10V
Package Type (Mfr.)TO-268AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 4mA
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFT70N20Q3 is a surface mount N-Channel MOSFET manufactured by IXYS, designed for high-power applications. It features a voltage capacity of 200 V and can handle a current of up to 70A when appropriately cooled. The component offers a low on-resistance of 40mOhm at a gate-source voltage of 10V and a current of 35A. It also comes with a gate charge of 67 nC at 10 V and an input capacitance of 3150 pF at 25 V, contributing to its performance efficiency in power switching applications. The device's packaging in a TO-268AA form factor facilitates effective thermal management with a power dissipation capacity of 690W under optimal conditions.
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