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IXFR80N10QN-Channel 100 V 76A (Tc) 310W (Tc) Through Hole ISOPLUS247™

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ABRmicro #.ABR2045-IXFR80-1024998
ManufacturerIXYS
MPN #.IXFR80N10Q
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXFR80N10Q(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFR80
Continuous Drain Current (ID) @ 25°C76A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)180 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4500 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 76A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFR80N10Q
PCN Obsolescence/ EOL
Mult Mosfet EOL 22/Mar/2017
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFR80N10Q is a power transistor developed by IXYS, featuring an N-Channel MOSFET design capable of withstanding voltages up to 100V. It facilitates a maximum current of 76A at a case temperature (Tc) of 25°C and can handle power dissipation up to 310W in the ISOPLUS247™ through-hole package. The component operates efficiently with a gate-source voltage rating of ±20V and a total gate charge of 180 nC at 10V. Additionally, it has an input capacitance of 4500 pF when measured at 25V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.