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IXFR48N50QN-Channel 500 V 40A (Tc) 310W (Tc) Through Hole ISOPLUS247™

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ABRmicro #.ABR2045-IXFR48-1019637
ManufacturerIXYS
MPN #.IXFR48N50Q
Estimated Lead Time-
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In Stock: 113
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™, Q Class
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFR48
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)190 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7000 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation310W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 24A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 4mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFR48N50Q is a power MOSFET manufactured by IXYS, characterized by its N-channel configuration. It operates at a maximum voltage of 500 volts and can handle continuous currents up to 40 amperes when mounted on a suitable heat sink (Tc). The device has a power dissipation capacity of 310 watts under similar conditions, optimizing it for high power applications. Packaged in the ISOPLUS247™ format, this MOSFET features a total gate charge of ±20 volts and a capacitance of 7000 pF at 25 volts, making it suitable for efficient switching operations in its voltage and current class.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.