IXFR36N50PN-Channel 500 V 19A (Tc) 156W (Tc) Through Hole ISOPLUS247™
1:$11.7020
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ABRmicro #.ABR2045-IXFR36-1013654
ManufacturerIXYS
MPN #.IXFR36N50P
Estimated Lead Time44 Weeks
SampleGet Free Sample
Datasheet
IXF(C,R)36N50P(PDF)
IXF(C,R)36N50P(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 11.7020
Ext. Price$ 11.7020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$11.7020$11.7020
30$9.4710$284.1340
120$8.9130$1069.5980
510$8.0790$4120.4180
1020$7.4100$7558.0730
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFR36
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)93 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5500 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation156W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 18A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFR36N50P is an N-channel MOSFET manufactured by IXYS, featuring a voltage rating of 500V and a current rating of 19A under certain conditions. It is capable of handling a power dissipation of up to 156W when mounted through-hole, utilizing the ISOPLUS247™ package. This MOSFET exhibits a low on-resistance of 190 milliohms at 18A and 10V, ensuring efficient conductivity. Additionally, it has a gate-source voltage tolerance of ±30V and a gate charge of 5500 pF at 25V, making it suitable for high-power and high-frequency applications.
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