IXFR24N100N-Channel 1000 V 22A (Tc) 416W (Tc) Through Hole ISOPLUS247™
1:$14.4090
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ABRmicro #.ABR2045-IXFR24-1002636
ManufacturerIXYS
MPN #.IXFR24N100
Estimated Lead Time-
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Datasheet
IXFR24N100(PDF)
IXFR24N100(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 14.4090
Ext. Price$ 14.4090
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Price Gradients
Qty.Unit PriceExt. Price
30$14.4090$432.2570
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIXFR24
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)267 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8700 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation416W (Tc)
RDS(on) Drain-to-Source On Resistance390mOhm @ 12A, 10V
Package Type (Mfr.)ISOPLUS247™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFR24N100 is a robust N-Channel MOSFET manufactured by IXYS, designed for high-voltage applications with a maximum drain-source voltage of 1000 V and a continuous drain current of 22A under specific conditions. It can handle a substantial power dissipation of up to 416W when properly mounted, facilitated by its ISOPLUS247™ package, which provides efficient heat management and electrical insulation. With a gate-source voltage tolerance of ±20V and optimized for a 10V gate drive voltage, this MOSFET is suitable for demanding power operations requiring high efficiency and reliability.
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