The IXFR10N100Q is a high-voltage N-channel MOSFET manufactured by IXYS, designed for efficient power handling. Encased in the ISOPLUS247™ package, it is capable of withstanding a maximum drain-source voltage of 1000 volts and can handle up to 9 amps of current at the case temperature, with a power dissipation of up to 250 watts. This device features a gate charge of 2900 picofarads at 25 volts and requires a gate-to-source threshold voltage of 5.5 volts at a test current of 4mA. The robust construction and electrical characteristics make it suitable for high-power applications, ensuring reliable performance under demanding conditions.