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IXFQ94N30P3N-Channel 300 V 94A (Tc) 1040W (Tc) Through Hole TO-3P

1:$9.5830

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ABRmicro #.ABR2045-IXFQ94-1032922
ManufacturerIXYS
MPN #.IXFQ94N30P3
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFQ94N30P3(PDF)
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In Stock: 100
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 9.5830
Ext. Price$ 9.5830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$9.5830$9.5830
30$7.7580$232.7510
120$7.3020$876.1800
510$6.6170$3374.7980
1020$6.0700$6191.4640
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Polar3™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFQ94
Continuous Drain Current (ID) @ 25°C94A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)102 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5510 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1040W (Tc)
RDS(on) Drain-to-Source On Resistance36mOhm @ 47A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 4mA
Package / CaseTO-3P-3, SC-65-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFQ94N30P3
Environmental Information
Ixys IC REACH
PCN Design/Specification
Multiple Devices Material 23/Jun/2020
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFQ94N30P3 is a high-performance N-Channel MOSFET manufactured by IXYS, designed for handling high voltage and current requirements. It operates with a voltage rating of 300 V and can handle a continuous current of 94A, with a power dissipation capacity of 1040W when mounted on a suitable heat sink in a through-hole TO-3P package. This MOSFET exhibits a low on-state resistance of 36 milliohms at 47A with a gate-source voltage of 10V, ensuring efficient conduction. It supports a gate-source voltage range of ±20V and features a total gate charge of 102 nC at a gate-source voltage of 10V, facilitating rapid switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.