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IXFP8N50P3N-Channel 500 V 8A (Tc) 180W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-IXFP8N-935034
ManufacturerIXYS
MPN #.IXFP8N50P3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXFx8N50P3(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesHiPerFET™, Polar3™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFP8N50
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)705 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance800mOhm @ 4A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1.5mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx8N50P3
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFP8N50P3 is an N-Channel MOSFET manufactured by IXYS, designed for efficient electrical performance with a drain-source voltage rating of 500 V and a drain current capacity of 8A. Housed in a TO-220-3 package suitable for through-hole mounting, it can handle up to 180W of power dissipation under specified conditions. The device features a maximum on-resistance of 800 milliohms at 4A and 10V, providing a balance between conductivity and control. Additionally, it has a gate charge of 13 nC at 10V, facilitating efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.