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IXFN39N90N-Channel 900 V 39A (Tc) 694W (Tc) Chassis Mount SOT-227B

1:$40.1870

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ABRmicro #.ABR2045-IXFN39-1022536
ManufacturerIXYS
MPN #.IXFN39N90
Estimated Lead Time-
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DatasheetDatasheetIXFN39N90(PDF)
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In Stock: 125
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 40.1870
Ext. Price$ 40.1870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
10$40.1870$401.8690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIXFN39
Continuous Drain Current (ID) @ 25°C39A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)390 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9200 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation694W (Tc)
RDS(on) Drain-to-Source On Resistance220mOhm @ 500mA, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFN39N90
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult Devices OBS 24/Feb/2014
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN39N90 is a power MOSFET manufactured by IXYS, designed for high-voltage, high-current applications. It is an N-Channel device capable of handling voltages up to 900V and currents up to 39A when mounted on a suitable chassis for heat dissipation, as indicated by its substantial power rating of 694W. Encased in a robust SOT-227B package, it features a relatively low on-resistance of 220mOhm at 500mA with a gate-source voltage of 10V. The part requires a gate drive voltage of 5V, drawing a gate current of 8mA for operation.
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