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IXFN36N110PN-Channel 1100 V 36A (Tc) 1000W (Tc) Chassis Mount SOT-227B

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ABRmicro #.ABR2045-IXFN36-956365
ManufacturerIXYS
MPN #.IXFN36N110P
Estimated Lead Time-
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In Stock: 4
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™, Polar
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFN36
Continuous Drain Current (ID) @ 25°C36A (Tc)
Drain-to-Source Voltage (VDS)1100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)350 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)23000 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1000W (Tc)
RDS(on) Drain-to-Source On Resistance240mOhm @ 500mA, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 1mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN36N110P is a power semiconductor component designed for high-voltage and high-current applications. It features an N-channel MOSFET configuration, supporting up to 1100 volts and a continuous current rating of 36 amperes at the case temperature. The device can handle up to 1000 watts of power dissipation, making it suitable for substantial power handling requirements. Housed in a robust SOT-227B chassis mount package, it offers low on-resistance and efficient thermal performance. Additionally, it has a substantial input capacitance of 23,000 picofarads at 25 volts and can tolerate gate-source voltages of up to ±30 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.