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IXFN180N07N-Channel 70 V 180A (Tc) 520W (Tc) Chassis Mount SOT-227B

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ABRmicro #.ABR2045-IXFN18-990620
ManufacturerIXYS
MPN #.IXFN180N07
Estimated Lead Time-
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFN180
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)70 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)480 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9000 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation520W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 500mA, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 8mA
Package / CaseSOT-227-4, miniBLOC
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFN180N07 is a robust N-channel power MOSFET manufactured by IXYS, designed for high efficiency and reliability in power applications. It operates with a maximum voltage of 70V and can handle continuous currents up to 180A under specified conditions. The MOSFET features a power dissipation capacity of 520W, supported by its thermally-enhanced SOT-227B package, which facilitates effective heat management. It exhibits a gate-source threshold voltage of 4V at a gate current of 8mA and can withstand gate-source voltages up to ±20V. The device also has a total gate charge of 9000 pF when measured at 25V, making it suitable for switching operations.
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