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IXFM42N20N-Channel 200 V 42A (Tc) 300W (Tc) Through Hole TO-204AE

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ABRmicro #.ABR2045-IXFM42-914009
ManufacturerIXYS
MPN #.IXFM42N20
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXF(H,M,T)(42,50,58)N20(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFM42
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)220 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4400 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance60mOhm @ 21A, 10V
Package Type (Mfr.)TO-204AE
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 4mA
Package / CaseTO-204AE
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(H,M,T)(42,50,58)N20
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)