ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
IXFL70N60Q2N-Channel 600 V 37A (Tc) 360W (Tc) Through Hole ISOPLUS264™

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFL70-920816
ManufacturerIXYS
MPN #.IXFL70N60Q2
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
IXEN60N120D1N/A
IXYS
IGBT Module NPT Single 1200 V 100 A 445 W Chassis Mount SOT-227B
IXGH50N60BN/A
IXYS
IGBT 600 V 75 A 300 W Through Hole TO-247AD
IXGH6N170$9.0360
IXYS
IGBT NPT 1700 V 12 A 75 W Through Hole TO-247AD
IXGK50N60BD1N/A
IXYS
IGBT 600 V 75 A 300 W Through Hole TO-264 (IXGK)
IXGN120N60A3N/A
IXYS
IGBT Module PT Single 600 V 200 A 595 W Chassis Mount SOT-227B
IXSR40N60CD1N/A
IXYS
IGBT PT 600 V 62 A 210 W Through Hole ISOPLUS247™
IXYL60N450$105.9140
IXYS
IGBT 4500 V 90 A 417 W Through Hole ISOPLUSi5-Pak™
Technical Specifications
SeriesHiPerFET™, Q2 Class
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFL70
Continuous Drain Current (ID) @ 25°C37A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)265 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12000 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation360W (Tc)
RDS(on) Drain-to-Source On Resistance92mOhm @ 35A, 10V
Package Type (Mfr.)ISOPLUS264™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFL70N60Q2 is an N-Channel MOSFET manufactured by IXYS, featuring a maximum voltage rating of 600 V and a continuous current rating of 37A at the case temperature (Tc). This device is capable of handling a substantial power of up to 360W at Tc and comes in a Through Hole ISOPLUS264™ package. It exhibits a low on-state resistance of 92mOhm when conducting 35A at a gate-source voltage of 10V, and a substantial input capacitance of 12000 pF at 25V. The gate threshold voltage is rated at 5.5V with a typical current of 8mA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.