IXFL44N80N-Channel 800 V 44A (Tc) 550W (Tc) Through Hole ISOPLUS264™
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ABRmicro #.ABR2045-IXFL44-907579
ManufacturerIXYS
MPN #.IXFL44N80
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFL44
Continuous Drain Current (ID) @ 25°C44A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)380 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10000 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation550W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 22A, 10V
Package Type (Mfr.)ISOPLUS264™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 8mA
Package / CaseTO-264-3, TO-264AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)