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IXFL44N60N-Channel 600 V 41A (Tc) 500W (Tc) Through Hole ISOPLUS264™
N/A
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ABRmicro #.ABR2045-IXFL44-1034007
ManufacturerIXYS
MPN #.IXFL44N60
Estimated Lead Time-
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFL44
Continuous Drain Current (ID) @ 25°C41A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)330 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8900 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 22A, 10V
Package Type (Mfr.)ISOPLUS264™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFL44N60 is an N-Channel MOSFET manufactured by IXYS, designed for high-power applications with a voltage rating of 600 V and a continuous current capability of 41A. Housed in an ISOPLUS264™ package for efficient thermal performance, it features a high power dissipation capacity of 500W. The device exhibits a gate charge of 330 nC at 10 V, making it suitable for fast switching operations, and it has an input capacitance of 8900 pF at 25 V, indicating its ability to handle substantial gate-drive signals efficiently. The through-hole design facilitates robust mechanical connections in various power electronic assemblies.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.