IXFK66N50Q2N-Channel 500 V 66A (Tc) 735W (Tc) Through Hole TO-264AA (IXFK)
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK66-963442
ManufacturerIXYS
MPN #.IXFK66N50Q2
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IXF(K,X)66N50Q2(PDF)
IXF(K,X)66N50Q2(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFK66
Continuous Drain Current (ID) @ 25°C66A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)200 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8400 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation735W (Tc)
RDS(on) Drain-to-Source On Resistance80mOhm @ 500mA, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK66N50Q2 is a robust N-Channel MOSFET manufactured by IXYS, designed to handle high power applications with a voltage rating of 500V and a current rating of 66A at a case temperature (Tc). It features a power dissipation capability of 735W when mounted appropriately in its TO-264AA through-hole package. This MOSFET has a gate threshold voltage of 4.5V with a 8mA gate current, a typical input capacitance of 8400 pF at 25V, and a total gate charge of 200 nC at 10V, allowing for efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.