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IXFK64N50Q3N-Channel 500 V 64A (Tc) 1000W (Tc) Through Hole TO-264AA (IXFK)

1:$23.8170

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFK64-959792
ManufacturerIXYS
MPN #.IXFK64N50Q3
Estimated Lead Time44 Weeks
SampleGet Free Sample
DatasheetDatasheetIXFx64N50Q3(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 23.8170
Ext. Price$ 23.8170
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$23.8170$23.8170
25$19.7460$493.6380
100$18.5110$1851.0880
500$15.7960$7898.0940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiPerFET™, Q3 Class
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIXFK64
Continuous Drain Current (ID) @ 25°C64A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)145 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6950 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1000W (Tc)
RDS(on) Drain-to-Source On Resistance85mOhm @ 32A, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)6.5V @ 4mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx64N50Q3
Environmental Information
Ixys IC REACH
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK64N50Q3 is an N-Channel MOSFET manufactured by IXYS, designed for high power applications. It operates with a drain-source voltage of 500 V and can handle a continuous current load of 64A when mounted to its maximum thermal capacity. Encased in a TO-264AA package, it is configured for through-hole mounting. It boasts a substantial power dissipation capacity of up to 1000W. The part features a gate charge of 145 nC at a gate-source voltage of 10 V and operates with a gate threshold voltage of 6.5V at a test current of 4mA, making it suitable for various demanding electronic needs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.