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IXFK50N50N-Channel 500 V 50A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

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ABRmicro #.ABR2045-IXFK50-1004952
ManufacturerIXYS
MPN #.IXFK50N50
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXF(N,K)55N50, 50N50(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFK50
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)330 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9400 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation560W (Tc)
RDS(on) Drain-to-Source On Resistance80mOhm @ 25A, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXF(N,K)55N50, 50N50
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK50N50 by IXYS is an N-Channel power MOSFET designed to handle high voltage and current requirements efficiently. It features a maximum drain-source voltage of 500 V and a continuous drain current of 50A when properly mounted with a case temperature control. The device can dissipate up to 560W, indicating robust thermal performance. The MOSFET is housed in a TO-264AA package, suitable for through-hole mounting, ensuring durability and ease of installation in various electronic applications. With an input capacitance of 9400 pF at 25 V and a total gate charge of 330 nC at 10 V, it offers a balance of high-speed switching performance and reduced power loss.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.