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IXFK24N90QN-Channel 900 V 24A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

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ABRmicro #.ABR2045-IXFK24-1029831
ManufacturerIXYS
MPN #.IXFK24N90Q
Estimated Lead Time-
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesHiPerFET™, Q Class
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFK24
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5900 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance450mOhm @ 500mA, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 4mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK24N90Q is an N-channel MOSFET produced by IXYS, featuring a high voltage capacity of 900 V and a current handling capability of 24 A under specified conditions. It is designed for through-hole installation with a TO-264AA package type, which is suitable for efficient heat dissipation. This component offers a maximum power dissipation of 500 W, ensuring stability in demanding electrical environments. It has an on-resistance of 450 mOhm at a drain current of 500 mA and a gate-source voltage of 10 V, along with a total gate charge of 170 nC at the same voltage. The device is capable of withstanding gate-source voltages up to ±20V, providing reliable performance in various circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.