IXFK20N120N-Channel 1200 V 20A (Tc) 780W (Tc) Through Hole TO-264AA (IXFK)
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ABRmicro #.ABR2045-IXFK20-1018900
ManufacturerIXYS
MPN #.IXFK20N120
Estimated Lead Time-
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFK20
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)160 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7400 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation780W (Tc)
RDS(on) Drain-to-Source On Resistance750mOhm @ 500mA, 10V
Package Type (Mfr.)TO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFK20N120 is a power semiconductor component manufactured by IXYS, featuring an N-channel design capable of handling up to 1200 volts and a continuous current of 20A at the case temperature (Tc), with a power dissipation capacity of 780W at Tc. Housed in a TO-264AA package, this device exhibits a typical input capacitance of 7400 pF at 25 V, an on-resistance of 750 milliohms at 500mA and 10V, and a total gate charge of 160 nC at 10 V. These specifications make it suitable for high-voltage and high-current applications requiring efficient power management.
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