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IXFH270N06T3N-Channel 60 V 270A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)

1:$6.1200

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFH27-1018954
ManufacturerIXYS
MPN #.IXFH270N06T3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIXFx270N06T3(PDF)
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In Stock: 420
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 6.1200
Ext. Price$ 6.1200
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$6.1200$6.1200
30$4.8840$146.5290
120$4.3700$524.4080
510$3.8560$1966.4640
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHiperFET™, TrenchT3™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFH270
Continuous Drain Current (ID) @ 25°C270A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)200 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12600 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation480W (Tc)
RDS(on) Drain-to-Source On Resistance3.1mOhm @ 100A, 10V
Package Type (Mfr.)TO-247 (IXTH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFx270N06T3
Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH270N06T3 is a robust N-Channel MOSFET manufactured by IXYS, designed for high-current and high-power applications. It features a maximum drain-source voltage of 60V and can handle continuous current up to 270A at the case temperature. The device is capable of dissipating 480W of power under specified conditions. Packaged in a TO-247 through-hole configuration, it facilitates effective heat dissipation and secure mounting. With a threshold voltage of 4V at 250µA and a gate to source voltage rating of ±20V, it offers reliable performance in demanding environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.