IXFH13N80N-Channel 800 V 13A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
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ABRmicro #.ABR2045-IXFH13-940197
ManufacturerIXYS
MPN #.IXFH13N80
Estimated Lead Time-
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Datasheet
IXFH/IXFM(11,13)N80(PDF)
IXFH/IXFM(11,13)N80(PDF)
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Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFH13
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)155 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4200 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance800mOhm @ 500mA, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 4mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH13N80 is a high-voltage N-channel MOSFET manufactured by IXYS. It can handle a maximum voltage of 800 volts and a current of 13 amperes when adequately cooled to maintain thermal limits. Packaged in a TO-247AD through-hole casing, the part allows for efficient heat dissipation, supporting a power dissipation capacity of up to 300 watts. With a gate-source voltage specification of ±20 volts and a typical gate threshold voltage of 4.5 volts at 4 milliamperes, it features an input capacitance of 4200 picofarads at 25 volts, making it suited for demanding power electronic applications.
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