IXFH10N100N-Channel 1000 V 10A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
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ABRmicro #.ABR2045-IXFH10-1013025
ManufacturerIXYS
MPN #.IXFH10N100
Estimated Lead Time-
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Datasheet
IXFH/IXFM(10,12)N100(PDF)
IXFH/IXFM(10,12)N100(PDF)
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFH10
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)1000 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)155 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4000 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 5A, 10V
Package Type (Mfr.)TO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 4mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFH10N100 is an N-Channel MOSFET manufactured by IXYS, designed for high-voltage and high-power applications. It can handle a maximum voltage of 1000 V and a continuous current of 10 A at a case temperature (Tc). With a power dissipation capability of 300 W at Tc, this MOSFET is housed in a robust TO-247AD through-hole package, which ensures effective heat management. It features a gate threshold voltage of 4.5 V at 4 mA and demonstrates an on-resistance of 1.2 Ohms when operating at 5 A with a gate voltage of 10 V. Additionally, it can tolerate gate-source voltages up to ±20 V.
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