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IXFE48N50QD3N-Channel 500 V 41A (Tc) 400W (Tc) Chassis Mount SOT-227B

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ABRmicro #.ABR2045-IXFE48-980960
ManufacturerIXYS
MPN #.IXFE48N50QD3
Estimated Lead Time-
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFE48
Continuous Drain Current (ID) @ 25°C41A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)190 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8000 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation400W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 24A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 4mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
Ixys IC REACH
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFE48N50QD3 is a power MOSFET manufactured by IXYS, designed for high-power applications. It features an N-Channel configuration with a maximum voltage rating of 500 V and a current rating of 41A at the case temperature (Tc). The device can dissipate up to 400W of power, offering efficient energy handling. Encased in a SOT-227B package, this MOSFET provides robust thermal management. Additionally, it has a gate-source voltage tolerance of ±20V and a gate threshold voltage of 4V with a 4mA current, making it suitable for precise operation within its specified parameters.
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