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IXFE48N50QN-Channel 500 V 41A (Tc) 400W (Tc) Chassis Mount SOT-227B
N/A
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ABRmicro #.ABR2045-IXFE48-948733
ManufacturerIXYS
MPN #.IXFE48N50Q
Estimated Lead Time-
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Technical Specifications
SeriesHiPerFET™, Q Class
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFE48
Continuous Drain Current (ID) @ 25°C41A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)190 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7000 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation400W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 24A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 4mA
Package / CaseSOT-227-4, miniBLOC
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFE48N50Q is an N-Channel MOSFET manufactured by IXYS, designed for high-voltage and high-power applications. It features a maximum drain-source voltage of 500 V and can handle a continuous drain current of 41A at thermal conditions defined by the case. The device can dissipate up to 400W of power when properly mounted on a chassis. It is designed with a gate threshold voltage of 4V at 4mA and can endure gate-source voltages up to ±20V. The MOSFET showcases a low on-resistance of 110 milliohms when operating at 24A with a gate voltage of 10V. Encapsulated in a SOT-227B package, this component is suited for efficient thermal management.
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