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IXFE180N10N-Channel 100 V 176A (Tc) 500W (Tc) Chassis Mount SOT-227B

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ABRmicro #.ABR2045-IXFE18-980270
ManufacturerIXYS
MPN #.IXFE180N10
Estimated Lead Time-
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DatasheetDatasheetIXFE180N10(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFE180
Continuous Drain Current (ID) @ 25°C176A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)360 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9100 pF @ 25 V
MfrIXYS
Mounting StyleChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 90A, 10V
Package Type (Mfr.)SOT-227B
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 8mA
Package / CaseSOT-227-4, miniBLOC
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IXFE180N10
PCN Obsolescence/ EOL
Mult DEV EOL/OBS 08/Nov/2023
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFE180N10 is a power MOSFET manufactured by IXYS, designed for high-current and high-power applications. It is an N-Channel MOSFET that can handle a maximum voltage of 100 V and a continuous current of 176A under specific conditions. The device is capable of dissipating up to 500W and is housed in a SOT-227B package, which is suitable for chassis mounting. It features a gate threshold voltage of 4V at a gate current of 8mA and can withstand gate-source voltages of up to ±20V. Additionally, the MOSFET has an input capacitance of 9100 pF at 25 V, contributing to its switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.