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IXFC26N50N-Channel 500 V 23A (Tc) 230W (Tc) Through Hole ISOPLUS220™
N/A
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ABRmicro #.ABR2045-IXFC26-994138
ManufacturerIXYS
MPN #.IXFC26N50
Estimated Lead Time-
SampleGet Free Sample
DatasheetIXFC24N50, IXFC26N50(PDF)
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Technical Specifications
SeriesHiPerFET™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFC26N50
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4200 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance200mOhm @ 13A, 10V
Package Type (Mfr.)ISOPLUS220™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 4mA
Package / CaseISOPLUS220™
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFC26N50 is an N-Channel MOSFET manufactured by IXYS, designed for high-efficiency switching applications. It is capable of handling a maximum drain-source voltage of 500 V and can conduct a continuous drain current of up to 23A under specified conditions. The device features a power dissipation capability of 230W when mounted properly. Encased in an ISOPLUS220™ package, this MOSFET offers enhanced thermal performance in a through-hole design. It operates with a gate threshold voltage of 4V at a gate current of 4mA and ensures optimal performance with a nominal gate voltage of 10V.
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