IXFC14N80PN-Channel 800 V 8A (Tc) 130W (Tc) Through Hole ISOPLUS220™
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ABRmicro #.ABR2045-IXFC14-928245
ManufacturerIXYS
MPN #.IXFC14N80P
Estimated Lead Time-
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Datasheet
IXFC14N80P(PDF)
IXFC14N80P(PDF)
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Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesHiPerFET™, PolarHT™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFC14N80
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)61 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3900 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance770mOhm @ 7A, 10V
Package Type (Mfr.)ISOPLUS220™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 4mA
Package / CaseISOPLUS220™
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFC14N80P is a power MOSFET manufactured by IXYS, featuring an N-Channel configuration with a voltage rating of 800 V and a current capability of 8A. It is designed to handle a power dissipation of up to 130W in optimal conditions, usually with adequate thermal management. This component is housed in a compact Through Hole ISOPLUS220™ package, which ensures efficient thermal performance. The MOSFET requires a gate-to-source voltage of 5.5V at a gate charge of 4mA, with a total gate charge of 61 nC at 10 V, and a gate threshold voltage of 10V, making it suitable for a variety of high-voltage switching applications.
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