IXFB70N60Q2N-Channel 600 V 70A (Tc) 890W (Tc) Through Hole PLUS264™
1:$23.2900
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFB70-928790
ManufacturerIXYS
MPN #.IXFB70N60Q2
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IXFB70N60Q2(PDF)
IXFB70N60Q2(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 53
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 23.2900
Ext. Price$ 23.2900
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
25$23.2900$582.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiPerFET™, Q2 Class
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIXFB70
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)265 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12000 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation890W (Tc)
RDS(on) Drain-to-Source On Resistance88mOhm @ 35A, 10V
Package Type (Mfr.)PLUS264™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 8mA
Package / CaseTO-264-3, TO-264AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFB70N60Q2 is a high-performance N-Channel MOSFET manufactured by IXYS, designed to handle voltages up to 600 V and a current of 70 A. It is capable of dissipating power up to 890 W, indicating its robustness in high power applications. The component is enclosed in a PLUS264™ package, which is a through-hole type, facilitating its integration into various circuit designs. It features a total gate charge of 265 nC, permitting operation with 10 V gate drive signals. Additionally, it withstands gate-source voltages of up to ±30V, ensuring reliability in diverse electronic environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.