IXFA220N06T3N-Channel 60 V 220A (Tc) 440W (Tc) Surface Mount TO-263
1:$4.0860
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IXFA22-1013683
ManufacturerIXYS
MPN #.IXFA220N06T3
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IXFxA220N06T3(PDF)
IXFxA220N06T3(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 112
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.0860
Ext. Price$ 4.0860
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.0860$4.0860
50$3.2400$161.9780
100$2.7770$277.7380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Technical Specifications
SeriesHiperFET™, TrenchT3™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXFA220
Continuous Drain Current (ID) @ 25°C220A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)136 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8500 pF @ 25 V
MfrIXYS
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation440W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 100A, 10V
Package Type (Mfr.)TO-263
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXFA220N06T3, manufactured by IXYS, is an N-Channel MOSFET designed for surface mount applications, encapsulated in a TO-263 package. It is capable of handling a maximum drain-source voltage of 60V and can conduct a continuous current of 220A at the case temperature. The component is optimized for high power efficiency, delivering a power dissipation of up to 440W under specified conditions. It features a gate charge characteristic, requiring a 10V gate voltage and possessing a capacitance of 8500 pF at 25V, allowing for efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.