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IXCP01N90EN-Channel 900 V 250mA (Tc) 40W (Tc) Through Hole TO-220-3
N/A
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ABRmicro #.ABR2045-IXCP01-977379
ManufacturerIXYS
MPN #.IXCP01N90E
Estimated Lead Time-
SampleGet Free Sample
DatasheetIXC(P,Y)01N90E(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIXCP01
Continuous Drain Current (ID) @ 25°C250mA (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)133 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance80Ohm @ 50mA, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 25µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IXCP01N90E is an N-Channel MOSFET manufactured by IXYS, designed to handle a drain-source voltage of up to 900 volts and a continuous drain current of 250mA at a specified case temperature. This device can dissipate 40 watts of power under similar thermal conditions. Encapsulated in a TO-220-3 package, it is suitable for through-hole mounting. The MOSFET features a total gate charge of 7.5 nanocoulombs when operating at 10 volts and has an input capacitance of 133 picofarads at 25 volts, with a gate threshold voltage of 10 volts. These specifications make it a reliable component for its intended circuit applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.