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IRFP250N-Channel 200 V 30A (Tc) 190W (Tc) Through Hole TO-247AD
N/A
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ABRmicro #.ABR2045-IRFP25-989283
ManufacturerIXYS
MPN #.IRFP250
Estimated Lead Time-
SampleGet Free Sample
DatasheetIRFP250(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFP25
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2970 pF @ 25 V
MfrIXYS
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance85mOhm @ 18A, 10V
Package Type (Mfr.)TO-247AD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFP250 is a power MOSFET manufactured by IXYS, featuring an N-Channel configuration. It is designed to handle a maximum voltage of 200 V and a continuous current of 30 A at case temperature (Tc). The device is capable of dissipating 190 W of power under optimal thermal conditions. Encased in a TO-247AD package, it offers low on-resistance of 85 mOhm at an 18A current with a gate-source voltage of 10V, demonstrating efficient conduction properties. The part exhibits a threshold voltage of 4V at a drain current of 250µA. Additionally, the IRFP250 has an input capacitance of 2970 pF at a 25 V drain-source voltage, indicating its switching speed characteristics.
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