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AUIRLL024NTR-IRN-Channel 55 V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223

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ABRmicro #.ABR278-AUIRLL-2114739
MPN #.AUIRLL024NTR-IR
Estimated Lead Time-
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In Stock: 2470
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateDecember 24, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Bulk
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C3.1A (Ta)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15.6 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)510 pF @ 25 V
MfrInternational Rectifier
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance65mOhm @ 3.1A, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-261-4, TO-261AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS0000.00.0000 (No rates found in the Harmonized Tariff Schedule)
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