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IDH12G65C5XKSA2Diode 650 V 12A Through Hole PG-TO220-2-1

1:$4.0630

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2042-IDH12G-927509
MPN #.IDH12G65C5XKSA2
Estimated Lead Time17 Weeks
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In Stock: 324
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 4.0630
Ext. Price$ 4.0630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.0630$4.0630
50$3.2180$160.9000
100$2.7590$275.9000
500$2.4520$1226.0000
1000$2.0990$2099.0000
2000$1.9770$3954.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesCoolSiC™+
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIDH12G65
Total Capacitance @ Vʀ, f360pF @ 1V, 1MHz
Average Rectified Forward Current (Iᴏ)12A
Reverse Leakage Current @ Rated Vʀ190 µA @ 650 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Junction Temperature Range-55°C ~ 175°C
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time > 500mA (Io)
Package Type (Mfr.)PG-TO220-2-1
TechnologySiC (Silicon Carbide) Schottky
Max. DC Blocking Voltage (Vʀ)650 V
Forward Voltage (Vғ) @ Iғ1.7 V @ 12 A
Package / CaseTO-220-2
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)