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IDH08G65C5XKSA2Diode 650 V 8A Through Hole PG-TO220-2-1

1:$2.1450

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2042-IDH08G-946695
MPN #.IDH08G65C5XKSA2
Estimated Lead Time17 Weeks
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 2.1450
Ext. Price$ 2.1450
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$2.1450$107.2500
100$1.8390$183.9000
250$1.7370$434.2500
500$1.6340$817.0000
1250$1.4000$1750.0000
2500$1.3180$3295.0000
5000$1.2640$6320.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesCoolSiC™+
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIDH08G65
Total Capacitance @ Vʀ, f250pF @ 1V, 1MHz
Average Rectified Forward Current (Iᴏ)8A
Reverse Leakage Current @ Rated Vʀ140 µA @ 650 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Junction Temperature Range-55°C ~ 175°C
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time > 500mA (Io)
Package Type (Mfr.)PG-TO220-2-1
TechnologySiC (Silicon Carbide) Schottky
Max. DC Blocking Voltage (Vʀ)650 V
Forward Voltage (Vғ) @ Iғ1.7 V @ 8 A
Package / CaseTO-220-2
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)