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IDH08G65C5XKSA1Diode 650 V 8A Through Hole PG-TO220-2-2

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ABRmicro #.ABR2042-IDH08G-927251
ManufacturerInfineon Technologies
MPN #.IDH08G65C5XKSA1
Estimated Lead Time-
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DatasheetDatasheetIDH08G65C5(PDF)
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In Stock: 12
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Shipping DateNovember 6, 2024
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Technical Specifications
SeriesCoolSiC™+
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIDH08G65
Total Capacitance @ Vʀ, f250pF @ 1V, 1MHz
Average Rectified Forward Current (Iᴏ)8A
Reverse Leakage Current @ Rated Vʀ280 µA @ 650 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Junction Temperature Range-55°C ~ 175°C
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time > 500mA (Io)
Package Type (Mfr.)PG-TO220-2-2
TechnologySiC (Silicon Carbide) Schottky
Max. DC Blocking Voltage (Vʀ)650 V
Forward Voltage (Vғ) @ Iғ1.7 V @ 8 A
Package / CaseTO-220-2
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IDH08G65C5
Simulation Models
CoolSiC™ Schottky diode 650V G5 IDHxxG65C5 Spice Model
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.10.0080 (Other; No import duty applies)