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1ED44175N01BXTSA1Low-Side Gate Driver IC Non-Inverting PG-SOT23-6-3

1:$0.8710

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ABRmicro #.ABR730-1ED441-241859
ManufacturerInfineon Technologies
MPN #.1ED44175N01BXTSA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
DatasheetDatasheet1ED44175N01B (PDF)
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In Stock: 2272
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.8710
Ext. Price$0.8710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8710$0.8710
10$0.7810$7.8090
25$0.7410$18.5140
100$0.6090$60.8810
250$0.5680$142.1090
500$0.5030$251.2810
1000$0.3970$397.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product Number1ED44175
Channel TypeSingle
Current - Peak Output (Source, Sink)2.6A, 2.6A
Driven ConfigurationLow-Side
Gate TypeIGBT, N-Channel MOSFET
Input TypeNon-Inverting
Logic Voltage - VIL, VIH1.2V, 1.9V
Mounting StyleSurface Mount
Number of Drivers1
Operating Temperature-40°C ~ 125°C (TA)
Parameter ProgrammingSupported
Output Signal Rise Time & Fall Time5ns, 5ns
Package Type (Mfr.)PG-SOT23-6-3
Supply Voltage12.7V ~ 20V
Package / CaseSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
1ED44175N01B
Environmental Information
RoHS Certificate
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8542.39.0001 (No rates found in the Harmonized Tariff Schedule)
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Additional Details
The 1ED44175N01BXTSA1 is a low-side gate driver IC manufactured by Infineon Technologies, housed in a compact PG-SOT23-6-3 package. It is designed to drive IGBTs and N-Channel MOSFETs, providing efficient switching with propagation delays of 5 nanoseconds for both high and low transitions. Operating within a voltage range of 12.7V to 20V, this driver IC offers reliable performance in managing gate signals for power transistors, making it suitable for precise control in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.