CMM5104D3SRAM - Asynchronous Memory IC 4Kbit Parallel 250 ns 18-CERDIP
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ABRmicro #.ABR2020-CMM510-2229505
ManufacturerHarris Corporation
MPN #.CMM5104D3
Estimated Lead Time-
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Datasheet(PDF)
Datasheet(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Bulk
Shipping DateNovember 5, 2024
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SRAM - Asynchronous Memory IC 16Kbit Parallel 200 ns 32-CLCC (13.97x11.43)
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Access Time250 ns
Base Product NumberCMM5104
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization4K x 1
Memory Size4Kbit
Memory TypeVolatile
MfrHarris Corporation
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 125°C (TA)
Parameter ProgrammingSupported
Package Type (Mfr.)18-CERDIP
TechnologySRAM - Asynchronous
Supply Voltage4.5V ~ 5.5V
Write Cycle Time (Twc)250ns
Package / Case18-CDIP (0.300", 7.62mm)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationPending Vendor Confirmation
US ECCNEAR99
HTSUS8542.32.0041 (Static read-write random access (SRAM); No import duty applies)