ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
2N5598Bipolar (BJT) Transistor PNP 60 V 2 A 20 W Through Hole TO-66 (TO-213AA)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-2N5598-2791936
ManufacturerGeneral Semiconductor
MPN #.2N5598
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet2N5598 Datasheet(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
2N2824N/A
General Semiconductor
Bipolar (BJT) Transistor 100 V 30 A 20MHz 118 W Stud Mount TO-63
Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C2 A
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max20 W
Package Type (Mfr.)TO-66 (TO-213AA)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic850mV @ 200µA, 1mA
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseTO-213AA, TO-66-2
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N5598 Datasheet
Environmental & Export Classifications
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
US ECCNEAR99