2N5598Bipolar (BJT) Transistor PNP 60 V 2 A 20 W Through Hole TO-66 (TO-213AA)
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ABRmicro #.ABR276-2N5598-2791936
ManufacturerGeneral Semiconductor
MPN #.2N5598
Estimated Lead Time-
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Datasheet
2N5598 Datashee... (PDF)
2N5598 Datashee... (PDF)
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusActive
Collector Current (Iᴄ)@25°C2 A
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max20 W
Package Type (Mfr.)TO-66 (TO-213AA)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic850mV @ 200µA, 1mA
Collector-Emitter Breakdown Voltage (Max.)60 V
Package / CaseTO-213AA, TO-66-2
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Datasheets
Environmental & Export Classifications
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)
US ECCNEAR99
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