FVP12030IM3LEG1Power Driver Module IGBT Half Bridge 300 V 120 A 19-PowerDIP Module (1.205", 30.60mm)
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ABRmicro #.ABR296-FVP120-928808
ManufacturerFairchild Semiconductor
MPN #.FVP12030IM3LEG1
Estimated Lead Time-
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Datasheet
FVP12030IM3LEG1 (PDF)
FVP12030IM3LEG1 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
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Technical Specifications
SeriesSPM®
Packaging
Tray
Lifecycle StatusObsolete
ConfigurationHalf Bridge
Current120 A
Mounting StyleThrough Hole
TypeIGBT
Voltage300 V
Isolation Voltage1500Vrms
Package / Case19-PowerDIP Module (1.205", 30.60mm)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8542.39.0001 (No rates found in the Harmonized Tariff Schedule)
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The FVP12030IM3LEG1 by Fairchild Semiconductor is a power driver module designed in a half-bridge configuration, utilizing Insulated Gate Bipolar Transistor (IGBT) technology. It operates at a voltage rating of 300 V and can handle a current of up to 120 A. This module is housed in a 19-PowerDIP module package, measuring 1.205 inches or 30.60mm, ensuring a compact form factor for efficient space utilization. The part provides a high degree of electrical isolation with a rating of 1500 Vrms, making it suitable for various power management applications, thanks to its robust construction and reliable performance under specified conditions.
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