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EPC2030ENGRTN-Channel 40 V 31A (Ta) Surface Mount Die
N/A
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ABRmicro #.ABR2045-EPC203-914214
ManufacturerEPC (Efficient Power Conversion)
MPN #.EPC2030ENGRT
Estimated Lead Time-
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DatasheetEPC2030(PDF)
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Technical Specifications
SerieseGaN®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberEPC20
Continuous Drain Current (ID) @ 25°C31A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 20 V
MfrEPC
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 30A, 5V
Package Type (Mfr.)Die
TechnologyGaNFET (Gallium Nitride)
Gate-to-Source Voltage (Vɢs)+6V, -4V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 16mA
Package / CaseDie
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Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0040 (Unmounted chips, dice and wafers; No import duty applies)