DIT095N08N-Channel 80 V 95A (Tc) 170W (Tc) Through Hole TO-220AB
1:$1.0250
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-DIT095-2148473
ManufacturerDiotec Semiconductor
MPN #.DIT095N08
Estimated Lead Time2 Weeks
SampleGet Free Sample
Datasheet
DIT095N08 Datas... (PDF)
DIT095N08 Datas... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.0250
Ext. Price$1.0250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0250$1.0250
50$0.8270$41.3310
100$0.6550$65.4500
500$0.5550$277.3130
1000$0.4520$451.5630
2000$0.4260$852.1250
5000$0.4050$2024.0630
10000$0.3870$3867.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C95A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)109 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6800 pF @ 25 V
MfrDiotec Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation170W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 40A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceNot covered by or subject to the RoHS directive
MSL LevelNot Required
REACH RegulationPending Vendor Confirmation
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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