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ZX3CDBS1M832TABipolar (BJT) Transistor NPN + Diode (Isolated) 20 V 4.5 A 140MHz 3 W Surface Mount 8-MLP (3x2)
N/A
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ABRmicro #.ABR2045-ZX3CDB-806822
ManufacturerDiodes Incorporated
MPN #.ZX3CDBS1M832TA
Estimated Lead Time-
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DatasheetZX3CDBS1M832(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
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N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible) Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberZX3CDBS1M832
Collector Current (Iᴄ)@25°C4.5 A
Collector Cut-off Current (Iᴄᴇs)(Max.)25nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A, 2V
Frequency - Transition140MHz
MfrDiodes Incorporated
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Power - Max3 W
Package Type (Mfr.)8-MLP (3x2)
Transistor TypeNPN + Diode (Isolated)
Vce Saturation (Max) @ Ib, Ic270mV @ 125mA, 4.5A
Collector-Emitter Breakdown Voltage (Max.)20 V
Package / Case8-VDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)