ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
ZVP2106ASTZP-Channel 60 V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)

1:$0.6840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-ZVP210-723204
ManufacturerDiodes Incorporated
MPN #.ZVP2106ASTZ
Estimated Lead Time40 Weeks
SampleGet Free Sample
DatasheetDatasheetZVP2106A(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 2705
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Cut Tape (CT)Tape & Box (TB)
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.6840
Ext. Price$ 0.6840
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6840$0.6840
10$0.5590$5.5900
100$0.4350$43.5000
500$0.3680$184.0000
1000$0.3000$300.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
ADTA114EUAQ-7$0.1610
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 330 mW Surface Mount SOT-323
DDTC144GKA-7-FN/A
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
DDTC144VKA-7-FN/A
Diodes Incorporated
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
DMN2075UDW-7$0.3300
Diodes Incorporated
N-Channel 20 V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
ZDT1048TA$1.2560
Diodes Incorporated
Bipolar (BJT) Transistor Array 2 NPN (Dual) 17.5V 5A 150MHz 2.75W Surface Mount SM8
ZDT717TAN/A
Diodes Incorporated
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 2.5A 110MHz 2.5W Surface Mount SM8
ZVN1409ASTOAN/A
Diodes Incorporated
N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible)
Technical Specifications
Series-
Packaging
Cut Tape (CT)
Tape & Box (TB)
Lifecycle StatusActive
Base Product NumberZVP2106
Continuous Drain Current (ID) @ 25°C280mA (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)100 pF @ 18 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation700mW (Ta)
RDS(on) Drain-to-Source On Resistance5Ohm @ 500mA, 10V
Package Type (Mfr.)E-Line (TO-92 compatible)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 1mA
Package / CaseE-Line-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
ZVP2106A
Environmental Information
Diodes Environmental Compliance Cert
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)