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ZTX853STOBBipolar (BJT) Transistor NPN 100 V 4 A 130MHz 1.2 W Through Hole E-Line (TO-92 compatible)

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ABRmicro #.ABR2045-ZTX853-711482
ManufacturerDiodes Incorporated
MPN #.ZTX853STOB
Estimated Lead Time-
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DatasheetDatasheetZTX853(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberZTX853
Collector Current (Iᴄ)@25°C4 A
Collector Cut-off Current (Iᴄᴇs)(Max.)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 2V
Frequency - Transition130MHz
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
Power - Max1.2 W
Package Type (Mfr.)E-Line (TO-92 compatible)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200mV @ 400mA, 4A
Collector-Emitter Breakdown Voltage (Max.)100 V
Package / CaseE-Line-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
ZTX853
Environmental Information
Diodes Environmental Compliance Cert
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0075 (With an operating frequency not less than 30 MHz; No import duty applies)