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DMTH10H005SCTN-Channel 100 V 140A (Tc) 187W (Tc) Through Hole TO-220AB

1:$2.0350

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DMTH10-734833
MPN #.DMTH10H005SCT
Estimated Lead Time8 Weeks
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For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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In Stock: 53
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 2.0350
Ext. Price$ 2.0350
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0350$2.0350
50$1.6370$81.8500
100$1.3470$134.7000
500$1.1400$570.0000
1000$0.9670$967.0000
2000$0.9190$1838.0000
5000$0.8850$4425.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberDMTH10
Continuous Drain Current (ID) @ 25°C140A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)111.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8474 pF @ 50 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation187W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 13A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)