Image is for reference only, the actual product serves as the standard.
DMT6009LCTN-Channel 60 V 37.2A (Tc) 2.2W (Ta), 25W (Tc) Through Hole TO-220-3

1:$0.6840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DMT600-706337
MPN #.DMT6009LCT
Estimated Lead Time12 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 1068
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.6840
Ext. Price$ 0.6840
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6840$0.6840
50$0.5490$27.4500
100$0.4350$43.5000
500$0.3680$184.0000
1000$0.3000$300.0000
2000$0.2830$566.0000
5000$0.2690$1345.0000
10000$0.2640$2640.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 330 mW Surface Mount SOT-323
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
N-Channel 20 V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
ZDT1048TA$1.2560
Bipolar (BJT) Transistor Array 2 NPN (Dual) 17.5V 5A 150MHz 2.75W Surface Mount SM8
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 2.5A 110MHz 2.5W Surface Mount SM8
N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible)
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberDMT6009
Continuous Drain Current (ID) @ 25°C37.2A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1925 pF @ 30 V
MfrDiodes Incorporated
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.2W (Ta), 25W (Tc)
RDS(on) Drain-to-Source On Resistance12mOhm @ 13.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)