Image is for reference only, the actual product serves as the standard.
DMNH4011SPSQ-13N-Channel 40 V 12.9A (Ta), 100A (Tc) 2.5W (Ta), 150W (Tc) Surface Mount PowerDI5060-8

1:$0.7650

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DMNH40-701945
MPN #.DMNH4011SPSQ-13
Estimated Lead Time20 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 3482
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 8, 2024
* Quantity
Unit Price$ 0.7650
Ext. Price$ 0.7650
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7650$0.7650
10$0.6260$6.2600
100$0.4860$48.6000
500$0.4130$206.5000
1000$0.3360$336.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 330 mW Surface Mount SOT-323
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SC-59-3
N-Channel 20 V 2.8A (Ta) 500mW (Ta) Surface Mount SOT-363
ZDT1048TA$1.2560
Bipolar (BJT) Transistor Array 2 NPN (Dual) 17.5V 5A 150MHz 2.75W Surface Mount SM8
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 2.5A 110MHz 2.5W Surface Mount SM8
N-Channel 90 V 10mA (Ta) 625mW (Ta) Through Hole E-Line (TO-92 compatible)
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberDMNH4011
Continuous Drain Current (ID) @ 25°C12.9A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25.5 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1405 pF @ 20 V
MfrDiodes Incorporated
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.5W (Ta), 150W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance10mOhm @ 50A, 10V
Package Type (Mfr.)PowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)